Recombination in Semiconductors

Types of Recombination
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  • Carrier Recombination and Generation
  • Ivan Pelant and Jan Valenta
  • UC Santa Barbara

    • Authors: V. Abakumov V. Perel I. Imprint: North Holland.

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    Published Date: 26th July Page Count: Flexible - Read on multiple operating systems and devices. Easily read eBooks on smart phones, computers, or any eBook readers, including Kindle. When you read an eBook on VitalSource Bookshelf, enjoy such features as: Access online or offline, on mobile or desktop devices Bookmarks, highlights and notes sync across all your devices Smart study tools such as note sharing and subscription, review mode, and Microsoft OneNote integration Search and navigate content across your entire Bookshelf library Interactive notebook and read-aloud functionality Look up additional information online by highlighting a word or phrase.

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    Semiconductors are characterized by two types of mobile carriers, electrons in the conduction band and holes in the valence band. Semiconductors: Where do generation and recombination occur in a PN junction diode? What is the detailed physical reason for the non-radiative. In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron.

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    Connect with:. Use your name:. Thank you for posting a review! We value your input. In the derivation of the SRH recombination generation model it is assumed that the number of trap centers is much larger than that of the carriers involved in this process. Another important effect for the modeling of MOS structures is the surface recombination. Since the semiconductor surface and interface between the semiconductor and the insulating material contain a large number of defects, such as dangling bonds, recombination centers at the semiconductor surface and interface can have a significant impact on the behavior of devices.

    The surface recombination model for the numerical simulation can be modeled by the SRH recombination equation.

    Carrier Recombination and Generation

    The only difference compared to the bulk recombination is that the recombination is due to a two-dimensional density of traps, , as the traps only exist at the surface or interface. Auger recombination involves three particles: an electron and a hole, which recombine in a band-to-band transition and give off the resulting energy to another electron or hole.

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    The expression for the net recombination rate is similar to that of simple band-to-band recombination, but the involvement of a third particle affects the recombination rate:. Both carrier types need to be available in the recombination process. Therefore, the rate is expected to be proportional to the product of n and p.

    Also, in thermal equilibrium, the recombination rate must equal the generation rate since there is no net recombination or generation. As the product of n and p equals n i 2 in thermal equilibrium, the net recombination rate can be expressed as:. Recombination at surfaces and interfaces can have a significant impact on the behavior of semiconductor devices.

    This is because surfaces and interfaces typically contain a large number of recombination centers because of the abrupt termination of the semiconductor crystal, which leaves a large number of electrically active states. In addition, the surfaces and interfaces are more likely to contain impurities since they are exposed during the device fabrication process.

    The net recombination rate due to trap-assisted recombination and generation is given by:. This expression is almost identical to that of Shockley-Hall-Read recombination.

    Ivan Pelant and Jan Valenta

    The only difference is that the recombination is due to a two-dimensional density of traps, N ts , as the traps only exist at the surface or interface. This equation can be further simplified for minority carriers in a quasi-neutral region. Auger recombination involves three particles: an electron and a hole, which recombine in a band-to-band transition and give off the resulting energy to another electron or hole.

    The expression for the net recombination rate is therefore similar to that of band-to-band recombination but includes the density of the electrons or holes, which receive the released energy from the electron-hole annihilation:. Carriers can be generated in semiconductors by illuminating the semiconductor with light. The energy of the incoming photons is used to bring an electron from a lower energy level to a higher energy level.

    In the case where an electron is removed from the valence band and added to the conduction band, an electron-hole pair is generated. A necessary condition is that the energy of the photon, E ph ,is larger than the bandgap energy, E g. As the energy of the photon is given off to the electron, the photon no longer exists.

    If each absorbed photon creates one electron-hole pair, the electron and hole generation rates are given by:. The absorption of light in a semiconductor causes the optical power to decrease with distance. This effect is described mathematically by:. The calculation of the generation rate of carriers therefore requires first a calculation of the optical power within the structure from which the generation rate can then be obtained using 2.

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    The generation rate of electrons and holes equals:. The excess carrier densities are then obtained from:. The excess carrier densities are then obtained from: So that the electron and hole densities equal:.